Protocol for refresh between a memory controller and a memory device

ABSTRACT

The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

This application is a continuation of U.S. Utility patent application Ser. No. 16/692,069, filed on behalf of first-named inventor Frederick A. Ware on Nov. 22, 2019 for “Protocol For Refresh Between A Memory Controller And A Memory Device,” which in turn is a continuation of U.S. Utility patent application Ser. No. 16/032,575, filed on behalf of first-named inventor Frederick A. Ware on Jul. 11, 2018 for “Protocol For Refresh Between A Memory Controller And A Memory Device” (now U.S. Pat. No. 10,510,395), which in turn is a continuation of U.S. Utility patent application Ser. No. 13/257,412, filed on behalf of first-named inventor Frederick A. Ware on Sep. 19, 2011 for “Protocol For Refresh Between A Memory Controller And A Memory Device” (abandoned), which in turn is a national state filing under 35 U.S.C. § 371 into the United States of Patent Cooperation Treaty Application No. PCT/US2010/030166, filed Apr. 7, 2010, which in turn claims priority to U.S. Provisional Patent Application No. 61/171,576, filed on Apr. 22, 2009. Priority is hereby claimed to the aforementioned patent applications, which are each hereby incorporated by reference.

BACKGROUND Field

The present embodiments generally relate to integrated circuit memory devices, controller devices and memory systems. More specifically, the present embodiments relate to the design of a protocol for refresh operations between an integrated circuit controller device and an integrated circuit memory device.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 presents a flow chart illustrating the process of entering and exiting the self-refresh state.

FIG. 2 presents a flow chart illustrating the process of entering and exiting the self-refresh state.

FIG. 3 illustrates an embodiment of a memory controller and a memory device.

FIG. 4A illustrates communication channels between a memory controller and a memory device.

FIG. 4B illustrates an alternative embodiment of a portion of the system in FIG. 4A.

FIG. 5 presents a timing diagram for the process of entering the self-refresh state.

FIG. 6 presents a timing diagram for the process of exiting the self-refresh state.

DETAILED DESCRIPTION

The disclosed embodiments provide a memory system that facilitates efficient self-refreshing operations, wherein the system may be configured to shut off power and/or shut down clocking to a high-speed interface, but leaves circuitry operating to self-time refreshing operations to maintain the contents of memory cells. In several embodiments, protocols for operating in this self-refresh state may decrease power consumption, which may be attractive in applications such as notebook computers or other portable computing devices for which battery life is important.

In some of the disclosed embodiments, progress information regarding the refresh operation is sent from the memory device to the memory controller during the self-refresh state through a (e.g., uncalibrated, low-power) sideband link. In this way, the uncertainty associated with the timing of the self-refresh operation may be eliminated. For example, in a conventional self-refresh operation, the self-refresh exit delay must account for the worst-case timing of an in-process internal refresh operation (controlled by an internally generated clock that may not be accurate) plus some margin. In contrast, in the disclosed embodiments, the controller can use the progress information received from the memory device to determine when the refresh operation actually completes and can immediately issue a new command to that bank. This enables the memory controller to more optimally control the sequencing of subsequent memory operations to significantly reduce the exit delay from the self-refresh state.

More specifically, referring to the exemplary embodiment depicted in FIG. 1 , the memory device first transitions from an auto-refresh state, where the memory controller controls refreshing operations for the memory device, to a self-refresh state, where the memory device controls the refreshing operations internally (operation 102). While the memory device is in the self-refresh state, progress information for the refreshing operations is sent from the memory device to the memory controller (operation 104). Additionally, during the self-refresh state, precharging operations can be overlapped with self-refreshing operations. Next, upon returning from the self-refresh state to the auto-refresh state, the progress information received from the memory device can be used by the memory controller to control the sequencing of subsequent operations by the memory controller (operation 106). In this embodiment, by sending progress information from the memory device to the memory controller, the memory controller does not have to wait for a predetermined or worst-case amount of time to ensure that any in-process self-refresh operation completes before scheduling a subsequent memory operation.

For example, the progress information can be used to determine whether a self-refreshing operation is in process or will occur in the near future. If not, the memory controller can immediately initiate one or more subsequent memory accesses without having to wait for a self-refreshing operation to complete. Additionally, the progress information can be used by the memory controller to determine that a given bank is presently being refreshed. This enables the memory controller to perform memory operations to other banks in the memory device while the self-refreshing operation completes for the given bank.

In one embodiment, the system enters a deep power-down state, wherein the system shuts off power and/or shuts down clocking to a high-speed interface. However, the memory device does not enter a self-refresh state. Instead, the memory controller continues to coordinate refreshing operations through a sideband link. This enables the memory controller to know whether a given bank is being refreshed and to schedule refreshing operations for other banks.

More specifically, referring to FIG. 2 , the system first transitions from a normal operating state to a power-down state, wherein a high-speed interface between the memory controller and the memory device is powered down (operation 202). Next, while the memory device is in the power-down state, the system sends commands to control refreshing operations from the memory controller to the memory device (e.g., through an uncalibrated, low-power sideband link) in operation 204. Finally, upon returning from the power-down state back to the normal operating state, if a given bank in the memory device is performing a refreshing operation, the system initiates memory operations to other banks in the memory device while the refreshing operation for the given bank completes (operation 206).

These operations are described in more detail below, but first we describe some details of the memory system.

Memory Controller and Memory Device

FIG. 3 illustrates a memory system including a controller chip (CTRL) 302 and a synchronous type dynamic random access memory device (DRAM) 304 according to an example embodiment. Controller chip 302 includes two sets of memory controller logic, namely memory controller logic 310 and memory controller logic 320. Memory controller logic 310 and 320 include refresh-control circuitry 312 and 322, respectively. This refresh-control circuitry 312 and 322 controls refreshing operations during a normal auto-refresh state. (However, in some embodiments, refresh-control circuitry 312 and 322 control refreshing operations during a power-down state through an uncalibrated, low-power sideband link, which operates through interface circuitry SL 330 on controller chip 302 and SL 360 on DRAM 304.)

DRAM 304 includes two sets of memory banks. The first set includes Bank 0 a, Bank 1 a, Bank 2 a, Bank 3 a, Bank 4 a, Bank 5 a, Bank 6 a and Bank 7 a, and the second set includes Bank 0 b, Bank 1 b, Bank 2 b, Bank 3 b, Bank 4 b, Bank 5 b, Bank 6 b and Bank 7 b. During the self-refresh state, refreshing operations for the first set of memory banks are controlled by control circuitry 340 on DRAM 304, and refreshing operations for the second set of memory banks are controlled by control circuitry 350 on DRAM 304.

The memory controller logic on controller chip 302 communicates with the memory banks on DRAM 304 through a number of different interfaces and communications links. More specifically, communications take place between memory controller logic 310 on controller chip 302 and the first set of memory banks on DRAM 304 through (1) interfaces DQ 314, DM 315, CA0 316, CA1 317 and CK 318 on controller chip 302, (2) differential links 306, and (3) interfaces DQ 341, DM 342, CA0 343, CA1 344 and CK 345 on DRAM 304. Similarly, communications take place between memory controller logic 320 on controller chip 302 and the second set of memory banks on DRAM 304 through (1) interfaces DQ 324, DM 325, CA0 326, CA1 327 and CK 328 on controller chip 302, (2) differential links 308, and (3) interfaces DQ 351, DM 352, CA0 353, CA1 354 and CK 355 on DRAM 304.

In this embodiment, controller chip 302 and DRAM 304 additionally communicate refreshing information through an uncalibrated, low-power sideband link which comprises (1) interface SL 330 in controller chip 302, (2) uncalibrated links 370, and (3) interface SL 360 on DRAM 304.

This interface circuitry of FIG. 3 is illustrated in more detail in an example embodiment shown in FIG. 4A. Referring to FIG. 4A, serializing and de-serializing circuitry is used in interfaces DQ 314, DM 315, CA0 316 and CA1 317 on controller chip 302, and in interfaces DQ 341, DM 342, CA0 343 and CA1 344 on DRAM 304. Moreover, a phase-locked loop (PLL) 361 and other clocking circuitry is used in interface CK 318 on controller chip 302 and associated interface CK 345 on DRAM 304. Interface SL 330 on controller chip 302 includes power-mode logic (PM) circuitry 371 which communicates with corresponding PM circuitry 381 in interface SL 360 on DRAM 304. This power-mode logic circuitry controls changes in the power mode for the memory system. Interface SL 330 additionally includes sideband-link logic circuitry (SL) 372 which communicates with corresponding SL circuitry 382 in interface SL 360 on DRAM 304. This sideband link circuitry facilitates moving control values in the form of read data SQ1 and write data SD1 to and from a control register (not shown) located in DRAM 304. Finally, interface SL 330 includes refresh logic circuitry (RF) 373 which communicates with corresponding refresh logic circuitry (RF) 383 in interface SL 360 on DRAM 304. During a power-down mode, this refresh circuitry sends refreshing commands from DRAM 304 to controller chip 302 through uncalibrated, low-power sideband links SL[0] and SL[1] as is illustrated by signal RF1 in the SL blocks 330 and 360 in FIG. 4A. In contrast, the SCK arrows and triangles remain pointed left-to-right because the SL[1:0] links do not carry SCK, SQ, or SD signals during the deep power-down/self-refresh state, only the RF and PM signals.

In an alternative embodiment which is illustrated in FIG. 4B, the RF1 signal travels in the opposite direction, from the memory controller to the memory device. In this embodiment, the arrows on the RF1 signal point from left-to-right, and the transmitter and receiver (triangle blocks) also point from left-to-right.

Although the exemplary embodiment disclosed in FIG. 3 includes two sets of memory controllers, two sets of communication interfaces and two memory bank sets, the same techniques can be applied to embodiments that include one memory controller, one set of communication interfaces and one memory bank set.

Timing Diagrams

FIG. 5 presents a timing diagram illustrating the process of entering the self-refresh state according to an embodiment. The process starts when the memory controller sends a precharge command (PR) 502 to the memory device, which causes the memory device to precharge an activated row while entering the self-refreshing state. This command includes the starting bank B and row R addresses, as well as the incrementing order (bank-fast or row-fast) (operation A). This bank/row address is represented as “{B,R}”. (The term “bank-fast” indicates that the bank address is incremented through all of the banks before the row address is incremented, whereas the term “row-fast” indicates that the row address is incremented through all of the rows before the bank address is incremented.) Next, the controller waits a time t_(PRF-CK) after the command is transmitted on the CA[1:0] links, and then stops the clock CK (operation B). The controller subsequently changes the power mode (PM) signal on signal line SL[1], which deassserts the enable signals (EN) for the high-speed interface (operation C). This causes the receivers on the DRAM for the CA[1:0], DM, DQ and CK links to be powered down. More specifically, deasserting the EN signal deasserts the ENCA, ENMCK1, and ENMCK4 signals which are illustrated in FIG. 4A. (The ENR and ENW signals are controlled separately by column access commands.)

Next, at a time t_(PM-RAS) after the PM transition, the memory device starts performing a self-refresh operation, which involves activating the row of memory cells located in the bank as specified by the {B,R} address. The memory device also asserts the refresh (RF) signal on signal line SL[0] to let the memory controller know that the memory device is performing the self-refresh operation (operation D). Next, at a time t_(RAS) after the RF assertion, the memory device precharges the memory cells located in the row in the bank as specified by the {B,R} address, and increments the {B,R} address in bank-fast or row-fast order, depending upon the mode selected by the PR command. The memory device also deasserts the RF signal (operation E). Next, at a time t_(IREF) (the refresh interval) after the previous RF assertion, the memory device starts performing a subsequent self-refresh operation. This involves incrementing the bank and row counters on the memory device to point to the next {B,R} address to be refreshed before commencing the next self-refresh operation. It also involves reasserting the RF signal (operation F).

FIG. 6 presents a timing diagram for the process of exiting the power-down state according to an embodiment. To exit self-refresh during the power-down state, the controller waits a time t_(RAS-PM) after the last RF assertion before deasserting PM (operation G). (This last RF assertion refreshes bank Bb of the memory component.) Next, the PM signal reassserts the EN signals so that the receivers for the CA[1:0] and CK links are powered up (operation H). The clock CK is then restarted a time t_(PM-EN)+t_(EN-CK) after PM is deasserted (operation I). Because the memory controller knows in operation G that the last RF assertion was directed to bank Bb, the memory controller can direct a refresh command to a bank Ba, which is different than the bank Bb that was last refreshed at a time t_(CK-CA) after the clock CK is restarted (operation J). Alternatively, the memory controller can direct a refresh command to a bank Bb that is the same as the bank Bb that was last refreshed at a time t_(RC) after the last assertion of RF (operation K).

In an alternative embodiment illustrated in FIG. 4B, the RF signal is driven in the opposite direction, from the memory controller to the memory device. This embodiment is virtually identical to the embodiment described above, except that the RF signal is initiated by the memory controller, and the SL[0] link carrying the RF signal is reversed. Hence, the timing diagrams in FIGS. 5 and 6 are almost the same for this alternative embodiment, except that some of the timing parameters, namely t_(PM-RAS), t_(RAS-PM) and t_(RC), differ slightly (the difference is only on the order of a few nanoseconds).

In the foregoing description and in the accompanying drawings, specific terminology and drawing symbols are set forth to provide a thorough understanding of the present invention. In some instances, the terminology and symbols may imply specific details that are not required to practice the invention. Consequently, these embodiments may include fewer components or additional components. Moreover, components may be combined into a single component and/or the position of one or more components may be changed.

While the preceding embodiments used a memory system implemented on separate integrated circuits or chips as an illustration, in other embodiments at least portions of either of these chips may be implemented on another integrated circuit. For example, controller chip 302 (FIG. 3 ) may be included on a processor in a computer system.

An output of a process for designing an integrated circuit, or a portion of an integrated circuit, comprising one or more of the circuits described herein may be a computer-readable medium such as, for example, a magnetic tape or an optical or magnetic disk. The computer-readable medium may be encoded with data structures or other information describing circuitry that may be physically instantiated as an integrated circuit or portion of an integrated circuit. Although various formats may be used for such encoding, these data structures are commonly written in Caltech Intermediate Form (CIF), Calma GDS II Stream Format (GDSII) or Electronic Design Interchange Format (EDIF). Those of skill in the art of integrated circuit design can develop such data structures from schematics of the type detailed above and the corresponding descriptions, and can encode the data structures on a computer-readable medium. Those of skill in the art of integrated circuit fabrication can use such encoded data to fabricate integrated circuits comprising one or more of the circuits described herein.

While the present invention has been described in connection with specific embodiments, the claims are not limited to what is shown. For example, in some embodiments the links between controller chip 302 and DRAM 304 in FIG. 3 may utilize half-duplex or full-duplex communication. Similarly, data or commands may be communicated using other encoding or modulation techniques. For example, embodiments of the invention may be adapted for use with multi-pulse-amplitude-encoded (multi-PAM) signals.

Moreover, some components are shown directly connected to one another, while others are shown connected via intermediate components. In each instance, the method of communication establishes some desired electrical communication between two or more circuit nodes, or terminals. Such coupling may often be accomplished using a number of circuit configurations, as will be understood by those of skill in the art. For example, the foregoing embodiments support AC-coupled links, DC-coupled links, or both. Therefore, the spirit and scope of the appended claims should not be limited to the foregoing description. Only those claims specifically reciting “means for” or “step for” should be construed in the manner required under the sixth paragraph of 35 U.S.C. § 112. 

What is claimed is:
 1. A memory controller integrated circuit (IC) to control a dynamic random access memory (DRAM) device having a first set of banks and a second set of banks, the memory controller IC comprising: a first interface to provide commands to the first set of banks, including a first command to perform a refresh operation in a first bank in the first set of banks, and a second command to access a selected bank of the first set of banks; wherein for the first interface, a period is to expire following completion of the refresh operation and prior to transmission of the second command, the period for the first interface being at least a first time interval when the first bank and the selected bank are the same bank in the first set of banks, and a second time interval when the first bank and the selected bank are different banks in the first set of banks; and wherein the first time interval is greater than the second time interval; and a second interlace to provide commands to a second set of the banks.
 2. The memory controller IC of claim 1, wherein: the commands to be provided by the second interface to the second set of banks include a first command to perform a refresh operation in a first bank in the second set of banks, and a second command to access a selected bank of the second set of banks; for the second interface, a period is to expire following completion of the refresh operation in the second set of banks, prior to transmission of the second command to the second set of banks, the period for the second interface being at least a third time interval when the first bank in the second set of banks and the selected bank in the second set of banks are the same bank, and a fourth time interval when the selected bank in the second set of banks and the first bank in the second set of banks are different banks; and the third time interval is greater than the fourth time interval.
 3. The memory controller IC of claim 2 at least one of the refresh operation in the first bank of at least one of the first set of the banks or the refresh operation in the second set of banks can be a self-refresh operation.
 4. The memory controller IC of claim 3, wherein the memory controller IC is to specify to the DRAM device in association with the self-refresh operation a selective incrementing order to be applied by the DRAM device in performing the self-refresh operation.
 5. The memory controller IC of claim 3, wherein the memory controller IC is to receive from the DRAM device progress information relating to the self-refresh operation, and wherein one of the first time interval, the second time interval, the third time interval, and the fourth time interval is to be applied dependent on the progress information.
 6. The memory controller IC of claim 1, wherein the first interface is to provide commands to the DRAM device via a serial, differential communication link and wherein the second interface is to provide commands to the DRAM device via a serial, differential communication link.
 7. The memory controller IC of claim 1, wherein data is to be transferred between the first interface and the first set of the banks via a first conductive path and wherein data is to be transferred between the second interface and the second set of banks via a second conductive path.
 8. The memory controller IC of claim 1, wherein the memory controller IC is to selectively initiate a low power mode, in which the calibrated data transfer between the first interface and the DRAM device is disabled, and wherein the memory controller IC is to transmit the first command to the first set of banks during the low power mode.
 9. The memory controller IC of claim 8, wherein the memory controller is to receive progress information relating to the refresh operation in the first bank of the first set of banks via sideband communication while in the low power mode.
 10. The memory controller of claim 1, where each of the first interface and the second interface is to provide an auto-refresh command to the DRAM device.
 11. A method of using a memory controller integrated circuit (IC) to control a dynamic random access memory (DRAM) device having banks of memory, the memory controller IC comprising a first interface and a second interface, the method comprising: via the first interface, providing commands to a first set of the banks, including a first command to perform a refresh operation in a first bank in the first set of banks, and a second command to access a selected bank of the first set of banks, wherein providing via the first interface comprises causing a period to expire following completion of the refresh operation and prior to transmission of the second command, the period for the first interlace being at least a first time interval when the first bank and the selected bank are the same bank in the first set of banks, and a second time interval and the selected bank are different banks in the first set of banks; and wherein the first time interval is greater than the second time interval; and via the second interface, providing commands to a second set of the banks.
 12. The method of claim 11, wherein: the commands to be provided by the second interface to the second set of banks include a first command to perform a refresh operation in a first bank in the second set of banks, and a second command to access a selected bank of the second set of banks; providing commands to the second set of banks comprises, for the second interface, causing a period to expire following completion of the refresh operation in the second set of banks, prior to transmission of the second command to the second set of banks, the period for the second interface being at least a third time interval when the first bank in the second set of banks and the selected bank in the second set of banks are the same bank, and a fourth time interval when the selected bank in the second set of banks and the first bank in the second set of banks are different banks; and the third time interval is greater than the fourth time interval.
 13. The method of claim 12, wherein the method further comprises providing at least one of the first command to perform the refresh operation in the first bank in the first set of banks, or the first command to perform the refresh operation in the first bank in the second set of banks, to the DRAM device as a command to perform a self-refresh operation.
 14. The method of claim 13, wherein the method further comprises causing the memory controller IC to specify to the DRAM device in association with the self-refresh operation a selective incrementing order to be applied by the DRAM device in performing the self-refresh operation.
 15. The method of claim 13, wherein the method further comprises receiving with the memory controller from the DRAM device progress information relating to the self-refresh operation, and causing one of the first time interval, the second time interval, the third time interval, and the fourth time interval to be applied dependent on the progress information.
 16. The method of claim 11, further comprising causing the memory controller to provide commands to the DRAM device via the first interface using a first serial, differential conductive communication path and to provide commands to the DRAM device via the second interface using a second serial, differential conductive communication path.
 17. The method of claim 11, wherein the method further comprises causing the memory controller IC to transfer data between the first interface and the first set of the banks via a first conductive path and to transfer data between the second interface and the second set of banks via a second conductive path.
 18. The method of claim 11, further comprising causing the memory controller IC to selectively initiate a low power mode, in which the calibrated data transfer between the first interface and the DRAM device is disabled and causing the memory controller to transmit the first command to the first set of banks during the low power mode.
 19. The method of claim 17, further comprising receiving with the memory controller IC progress information relating to the refresh operation in the first bank of the first set of banks via sideband communication while in the low power mode.
 20. A memory controller integrated circuit (IC) to control a dynamic random access memory (DRAM) device having banks of memory, the memory controller IC comprising a first interface and a second interface, the memory controller IC comprising: means for, via the first interface, providing commands to a first set of the banks, including a first command to perform a refresh operation in a first bank in the first set of banks, and a second command to access a selected bank of the first set of banks, wherein said means for providing is to cause a period to expire following completion of the refresh operation and prior to transmission of the second command, the period for the first interface being at least a first time interval when the first bank and the selected bank are the same bank in the first set of banks, and a second time interval and the selected bank are different banks in the first set of banks; and wherein the first time interval is greater than the second time interval; and means for, via the second interface, providing commands to a second set of the banks. 